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R5013ANX
Transistors
Electrical characteristic curves
100
10
Operation in this
area is limited
by R DS(ON)
P W =100us
20
15
10V
6.5V
7.0V
8.0
6.0V
10
8
Ta= 25°C
Pulsed
8.0V
10V
5.5V
1
P W =1ms
DC operation
10
5.5V
5.0V
6
4
7.0V
6.5V
6.0V
5.0V
0.1
Ta = 25°C
Single Pulse
5
V GS = 4.5V
Ta= 25°C
Pulsed
2
V GS = 4.5V
0.01
0
0
0.1
1
10
100
1000
0
10
20
30
40
50
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.2: Typical Output Characteristics( )
DRAIN-SOURCE VOLTAGE: V DS (V)
Fig.3: Typical Output Characteristics( )
100
10
1
V DS = 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
6
5
4
3
V DS = 10V
I D = 1mA
10
1
V GS = 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
2
0.1
0.01
1
0.001
0
0.01
0.0
1.5
3.0
4.5
6.0
-50
0
50
100
150
0.1
1
10
100
1
GATE-SOURCE VOLTAGE : V GS (V)
Fig.4 Typical Transfer Characteristics
Ta=25°C
1
CHANNEL TEMPERATURE: T ch (°C)
Fig.5 Gate Threshold Voltage
vs. Channel
V GS = 10V
100
DRAIN CURRENT : I D (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
V DS = 10V
0.8
Pulsed
0.8
Pulsed
Pulsed
10
0.6
0.6
I D = 13.0A
1
0.4
I D = 13.0A
0.4
Ta= -25°C
0.2
I D = 6.5A
0.2
I D = 6.5A
0.1
Ta= 25°C
Ta= 75°C
Ta= 125°C
0
0
0.01
0
5
10
15
-50
0
50
100
150
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : V GS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source
CHANNEL TEMPERATURE: T ch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel
DRAIN CURRENT : I D (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
Rev.A
3/5
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